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Artículo

Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects

Benfica, Juliano; Green, Bruno; Porcher, Bruno C.; Bolzani Poehls, Letícia; Vargas, Fabian; Medina, Nilberto H.; Added, Nemitala; P. de Aguiar, Vitor A.; Macchione, Eduardo L. A.; Aguirre, Fernando; Silveira. Marcilei A.G.; Pérez, MartínIcon ; Sofo Haro, Miguel FranciscoIcon ; Sidelnik, Iván PedroIcon ; Blostein, Juan JeronimoIcon ; Lipovetzky, JoséIcon ; Bezerra Cabral, Antonio Eduardo
Fecha de publicación: 20/04/2016
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions on Nuclear Science
ISSN: 0018-9499
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:
Astronomía; Ingeniería de Sistemas y Comunicaciones

Resumen

This work proposes a novel methodology to evaluate SRAM-based FPGA's susceptibility with respect to Single-Event Upset (SEU) as a function of noise on VDD power pins, Total-Ionizing Dose (TID) and TID-imprinted effect on BlockRAM cells. The proposed procedure is demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8 MV Pelletron accelerator for the SEU test with heavy-ions, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. In order to observe the TID-induced imprint effect inside the BlockRAM cells, a second SEU test with neutrons was performed with Americium/Beryllium (241 AmBe). The noise was injected into the power supply bus according to the IEC 61.000-4-29 standard and consisted of voltage dips with 16.67% and 25% of the FPGA's VDD at frequencies of 10 Hz and 5 kHz, respectively. At the end of the experiment, the combined SEU failure rate, given in error/bit.day, is calculated for the FPGA's BlockRAM cells. The combined failure rate is defined as the average SEU failure rate computed before and after exposition of the FPGA to the TID.
Palabras clave: Combined Test , Electromagnetic Interference (Emi) , Power-Supply Noise , Seu Sensitivity , Spartan 3e , Sram-Based Fpga , Tid
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/62353
DOI: https://dx.doi.org/10.1109/TNS.2016.2523458
URL: https://ieeexplore.ieee.org/document/7454850
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Benfica, Juliano; Green, Bruno; Porcher, Bruno C.; Bolzani Poehls, Letícia; Vargas, Fabian; et al.; Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 2; 20-4-2016; 1294-1300
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