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dc.contributor.author
Fujiwara, Kohei  
dc.contributor.author
Nemoto, Takumi  
dc.contributor.author
Rozenberg, Marcelo Javier  
dc.contributor.author
Nakamura, Yoshinobu  
dc.contributor.author
Takagi, Hidenori  
dc.date.available
2018-10-03T18:11:38Z  
dc.date.issued
2008-12  
dc.identifier.citation
Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori; Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices; Japan Society Applied Physics; Japanese Journal Of Applied Physics; 47; 8 PART 1; 12-2008; 6266-6271  
dc.identifier.issn
0021-4922  
dc.identifier.uri
http://hdl.handle.net/11336/61544  
dc.description.abstract
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Japan Society Applied Physics  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
Cuo  
dc.subject
Dielectric Breakdown  
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Memory Effect  
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Reduction-Oxidation  
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Reram  
dc.subject
Resistance Switching  
dc.subject.classification
Astronomía  
dc.subject.classification
Ciencias Físicas  
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CIENCIAS NATURALES Y EXACTAS  
dc.title
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2018-10-03T17:28:34Z  
dc.journal.volume
47  
dc.journal.number
8 PART 1  
dc.journal.pagination
6266-6271  
dc.journal.pais
Japón  
dc.journal.ciudad
Tokyo  
dc.description.fil
Fil: Fujiwara, Kohei. University Of Tokyo; Japón  
dc.description.fil
Fil: Nemoto, Takumi. University Of Tokyo; Japón  
dc.description.fil
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina  
dc.description.fil
Fil: Nakamura, Yoshinobu. University Of Tokyo; Japón  
dc.description.fil
Fil: Takagi, Hidenori. University Of Tokyo; Japón  
dc.journal.title
Japanese Journal Of Applied Physics  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1143/JJAP.47.6266  

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