Chemical Etching and TEM Crystalline Quality Assessment of Single Crystalline ZnSe Ingots Grown by I2 Vapor Phase Transport

Abstract

Crystalline defects were studied in single crystalline ZnSe grown by chemical transport using I2 as gaseous carrier. Transmission electronic microscopy determined an excellent structural order in the micrometric and nanometric range. Larger material areas were studied by chemical etching using different reagents to determine average dislocations density and average adjacent subgrains misorientation. Comparable micrographic results of different reagents are shown. Characterization values of ZnSe commercial substrate grown by High Pressure Bridgman (HPB) have been compared to those that correspond to our grown material wafers. Characterization proved that the semiconductor crystalline quality in our wafers is appropriate for optical devices.