Artículo
White light from annealed porous silicon: Broadband emission from violet to the near infrared
Marín Ramírez, Oscar Alonso
; Gennaro, Ana Maria
; Tirado, Monica Cecilia
; Koropecki, Roberto Roman
; Comedi, David Mario
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Fecha de publicación:
03/2015
Editorial:
Elsevier Science
Revista:
Materials Letters
ISSN:
0167-577X
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.
Palabras clave:
White Light Emission
,
Photoluminescence
,
Porous Silicon
,
Silicon Dioxide
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Colecciones
Articulos(CCT - NOA SUR)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Articulos(IFIS - LITORAL)
Articulos de INST.DE FISICA DEL LITORAL
Articulos de INST.DE FISICA DEL LITORAL
Citación
Marín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario; White light from annealed porous silicon: Broadband emission from violet to the near infrared; Elsevier Science; Materials Letters; 150; 3-2015; 55-58
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