Artículo
Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
Gorchon, J.; Curiale, Carlos Javier
; Lemaître, A.; Moisan, N.; Cubukcu, M.; Malinowski, G.; Ulysse, C.; Faini, G.; Von Bardeleben, H.J.; Jeudy, V.
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Fecha de publicación:
14/01/2014
Editorial:
American Physical Society
Revista:
Physical Review Letters
ISSN:
0031-9007
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
Palabras clave:
Spin Accumulation
,
Domain Wall Dynamics
,
Ferromagnetic Semiconductors
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; et al.; Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer; American Physical Society; Physical Review Letters; 112; 2; 14-1-2014; 026601,1-5
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