Artículo

Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Gorchon, J.; Curiale, Carlos JavierIcon ; Lemaître, A.; Moisan, N.; Cubukcu, M.; Malinowski, G.; Ulysse, C.; Faini, G.; Von Bardeleben, H.J.; Jeudy, V.
Fecha de publicación: 14/01/2014
Editorial: American Physical Society
Revista: Physical Review Letters
ISSN: 0031-9007
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
Palabras clave: Spin Accumulation , Domain Wall Dynamics , Ferromagnetic Semiconductors
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/27543
URL: http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.112.026601
DOI: http://dx.doi.org/10.1103/PhysRevLett.112.026601
URL: https://www.ncbi.nlm.nih.gov/labs/articles/24484033/
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Gorchon, J.; Curiale, Carlos Javier; Lemaître, A.; Moisan, N.; Cubukcu, M.; et al.; Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer; American Physical Society; Physical Review Letters; 112; 2; 14-1-2014; 026601,1-5
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