Artículo
In‐Materia Annealing and Combinatorial Optimization Based on Vertical Memristive Array
Lee, Soo Hyung; Cheong, Sunwoo; Cho, Jea Min; Ghenzi, Néstor
; Shin, Dong Hoon; Jang, Yoon Ho; Han, Janguk; Park, Tae Won; Kim, Dong Yun; Shim, Sung Keun; Han, Joon Kyu; Kim, Seung Soo; Hwang, Cheol Seong
; Shin, Dong Hoon; Jang, Yoon Ho; Han, Janguk; Park, Tae Won; Kim, Dong Yun; Shim, Sung Keun; Han, Joon Kyu; Kim, Seung Soo; Hwang, Cheol Seong
Fecha de publicación:
08/2024
Editorial:
Wiley VCH Verlag
Revista:
Advanced Materials
ISSN:
0935-9648
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Due to its area and energy efficiency, a memristive crossbar array (CBA) has been extensively studied for various combinatorial optimization applications, from network problems to circuit design. However, conventional approaches include heavily burdening software fine-tuning for the annealing process. Instead, this study introduces the “in-materia annealing” method, where the inter-layer interference of vertically stacked memristive CBA is utilized as an annealing method. When mapping combinatorial optimization problems into the configuration layer of the CBA, exponentially decaying annealing profiles are generated in nearby noise layers. Moreover, in-materia annealing profiles can be controlled by changing compliance current, read voltage, and read pulse width. Therefore, the annealing profiles can be arbitrarily controlled and generated individually for each cell, providing rich noise sources to solve the problem efficiently. Consequently, the experimental and simulation of Max-Cut and weighted Max-Cut problems achieve notable results with the minimum software burden.
Palabras clave:
Memristor
,
Graph
,
Iising
,
Synapse
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Lee, Soo Hyung; Cheong, Sunwoo; Cho, Jea Min; Ghenzi, Néstor; Shin, Dong Hoon; et al.; In‐Materia Annealing and Combinatorial Optimization Based on Vertical Memristive Array; Wiley VCH Verlag; Advanced Materials; 36; 40; 8-2024; 1-12
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