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dc.contributor.author
Pico, Roman Eugenio  
dc.contributor.author
Abufager, Paula Natalia  
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Hamad, Ignacio Javier  
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Robles, Roberto  
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Lorente, Nicolas  
dc.date.available
2025-07-03T12:02:31Z  
dc.date.issued
2024-08  
dc.identifier.citation
Pico, Roman Eugenio; Abufager, Paula Natalia; Hamad, Ignacio Javier; Robles, Roberto; Lorente, Nicolas; Understanding the interlayer coupling in 1 T / 1 H − NbSe 2 heterobilayers; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 110; 7; 8-2024; 1-10  
dc.identifier.issn
1098-0121  
dc.identifier.uri
http://hdl.handle.net/11336/265133  
dc.description.abstract
The properties of 2D materials are strongly influenced by their substrate, leading to a variety of proximity effects like screening, charge transfer, and hybridization. Surprisingly, there is a dearth of theoretical studies on these effects. Particularly, previous theoretical research on the star of David (SOD) structure in 1⁢−NbSe2 has focused on single-layer configurations or stacking with the same 1⁢ phase without any real substrate. Here, we depart from these approaches and explore how these proximity effects shape the electronic and magnetic properties of the 1⁢−NbSe2 phase when it is grown on the metallic 1⁢−NbSe2 substrate. Using density functional calculations, we establish a common framework to define the key characteristics of both free-standing 1⁢−NbSe2 and 1⁢−NbSe2. We then identify the optimal stacking arrangement for these two layers, revealing a transfer from the 1⁢ to the 1⁢ phase and a reorganization of charge within each layer. Our findings indicate that the magnetic moment of the SOD structure is still robust; however, it is diminished due to a reduction in the on-site Coulomb interaction of the Hubbard bands. Additionally, the interlayer coupling induces metallicity in the 1⁢ phase and increases the decoupling of the lower Hubbard band from the valence band.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
American Physical Society  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
2D materials  
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Electronic properties  
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Transition metal dichalcogenides  
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Charge density waves  
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Física de los Materiales Condensados  
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Ciencias Físicas  
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CIENCIAS NATURALES Y EXACTAS  
dc.title
Understanding the interlayer coupling in 1 T / 1 H − NbSe 2 heterobilayers  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2025-07-02T14:35:19Z  
dc.identifier.eissn
2469-9969  
dc.journal.volume
110  
dc.journal.number
7  
dc.journal.pagination
1-10  
dc.journal.pais
Estados Unidos  
dc.journal.ciudad
New York  
dc.description.fil
Fil: Pico, Roman Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Rosario. Instituto de Física de Rosario. Universidad Nacional de Rosario. Instituto de Física de Rosario; Argentina  
dc.description.fil
Fil: Abufager, Paula Natalia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Rosario. Instituto de Física de Rosario. Universidad Nacional de Rosario. Instituto de Física de Rosario; Argentina  
dc.description.fil
Fil: Hamad, Ignacio Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Rosario. Instituto de Física de Rosario. Universidad Nacional de Rosario. Instituto de Física de Rosario; Argentina  
dc.description.fil
Fil: Robles, Roberto. Donostia International Physic Center (dipc);  
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Fil: Lorente, Nicolas. Donostia International Physic Center (dipc);  
dc.journal.title
Physical Review B: Condensed Matter and Materials Physics  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://link.aps.org/doi/10.1103/PhysRevB.110.075427  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevB.110.075427