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dc.contributor.author
Pusep, Y. A.
dc.contributor.author
Rodrigues, D. A.
dc.contributor.author
Galzerani, J. C.
dc.contributor.author
Arce, Roberto Delio
dc.contributor.author
Koropecki, Roberto Roman
dc.contributor.author
Comedi, David Mario
dc.date.available
2017-10-06T16:41:48Z
dc.date.issued
2009-12
dc.identifier.citation
Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; et al.; Internal Strain Distribution in Freestanding Porous Silicon; Electrochemical Society; Journal of the Electrochemical Society; 156; 12; 12-2009; 215-217
dc.identifier.issn
0013-4651
dc.identifier.uri
http://hdl.handle.net/11336/26088
dc.description.abstract
Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Electrochemical Society
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Porous Silicon
dc.subject
Raman Spectroscopy
dc.subject
Elastic Properties
dc.subject.classification
Otras Ciencias Físicas
dc.subject.classification
Ciencias Físicas
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
dc.title
Internal Strain Distribution in Freestanding Porous Silicon
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2017-10-04T14:45:30Z
dc.journal.volume
156
dc.journal.number
12
dc.journal.pagination
215-217
dc.journal.pais
Estados Unidos
dc.description.fil
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
dc.description.fil
Fil: Rodrigues, D. A.. Universidade Federal do Sao Carlos; Brasil
dc.description.fil
Fil: Galzerani, J. C.. Universidade Federal do Sao Carlos; Brasil
dc.description.fil
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
dc.description.fil
Fil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.journal.title
Journal of the Electrochemical Society
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1149/1.3225832


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