Artículo
Internal Strain Distribution in Freestanding Porous Silicon
Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio
; Koropecki, Roberto Roman
; Comedi, David Mario
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Fecha de publicación:
12/2009
Editorial:
Electrochemical Society
Revista:
Journal of the Electrochemical Society
ISSN:
0013-4651
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Elastic properties of freestanding porous silicon layers fabricated by electrochemical anodization were studied by Raman scattering. Different anodization currents provided different degrees of porosity in the nanometer scale. Raman lines corresponding to the longitudinal optical phonons of crystalline and amorphous phases were observed. The amorphous volume fraction increased and the phonon frequencies for both phases decreased with increasing porosity. A strain distribution model is proposed whose fit to the experimental results indicates that the increasing nanoscale porosity causes strain relaxation in the amorphous domains and strain buildup in the crystalline ones. The present analysis has significant implications on the estimation of the crystalline Si domain’s characteristic size from Raman scattering data.
Palabras clave:
Porous Silicon
,
Raman Spectroscopy
,
Elastic Properties
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Pusep, Y. A.; Rodrigues, D. A.; Galzerani, J. C.; Arce, Roberto Delio; Koropecki, Roberto Roman; et al.; Internal Strain Distribution in Freestanding Porous Silicon; Electrochemical Society; Journal of the Electrochemical Society; 156; 12; 12-2009; 215-217
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