Artículo

The Bulk Band Structure and Inner Potential of Layered In4Se3

Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, LeonardoIcon ; Albanesi, Eduardo AldoIcon ; Petukhov, A.G.; Galiy, P.; Fiyala, Y.
Fecha de publicación: 12/2008
Editorial: Elsevier Science
Revista: Applied Surface Science
ISSN: 0169-4332
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.
Palabras clave: Layered Semiconductors , Bulk Band Structure , Photoemission , Fp-Lapw
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/25400
DOI: http://dx.doi.org/10.1016/j.apsusc.2008.01.061
URL: http://www.sciencedirect.com/science/article/pii/S0169433208000615
Colecciones
Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; et al.; The Bulk Band Structure and Inner Potential of Layered In4Se3; Elsevier Science; Applied Surface Science; 254; 12-2008; 4322-4325
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