Artículo
Single-Quantum Measurement With a Multiple-Amplifier Sensing Charge-Coupled Device
Botti, Ana Martina
; Cervantes Vergara, Brenda A.; Chavez, Claudio R.; Chierchie, Fernando
; Drlica Wagner, Alex; Estrada, Juan; Fernández Moroni, Guillermo
; Holland, Stephen E.; Irigoyen Gimenez, Blas Junior; Lapi, Agustín Javier
; Villalpando, Edgar Marrufo; Sofo Haro, Miguel Francisco
; Tiffenberg, Javier Sebastian
; Uemura, Sho






Fecha de publicación:
06/2024
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions On Electron Devices
ISSN:
0018-9383
e-ISSN:
0018-9383
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
A novel readout architecture that uses multiple nondestructive floating-gate amplifiers (FGAs) to achieve subelectron readout noise in a thick, fully depleted silicon detector is presented. This multiple-amplifier sensing charge-coupled device (MAS-CCD) can perform multiple independent charge measurements with each amplifier; measurements with multiple amplifiers can then be combined to further reduce the readout noise. This allows getting subelectron noise operation in less time compared with single-nondestructive-amplifier CCDs. The performance of this detector is demonstrated, emphasizing the ability to resolve individual quanta and to combine measurements across amplifiers to reduce readout noise. These characteristics make it a candidate technology for astronomical observations, quantum imaging, and low-energy interacting particles.
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Articulos(IFEG)
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Articulos(IIIE)
Articulos de INST.DE INVEST.EN ING.ELECTRICA "A.DESAGES"
Articulos de INST.DE INVEST.EN ING.ELECTRICA "A.DESAGES"
Citación
Botti, Ana Martina; Cervantes Vergara, Brenda A.; Chavez, Claudio R.; Chierchie, Fernando; Drlica Wagner, Alex; et al.; Single-Quantum Measurement With a Multiple-Amplifier Sensing Charge-Coupled Device; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 71; 6; 6-2024; 3732-3738
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