Artículo
Selective area doping of GaN towards high-power applications
Fecha de publicación:
05/2023
Editorial:
IOP Publishing
Revista:
Journal of Physics D: Applied Physics
ISSN:
0022-3727
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal-oxide-semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.
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Colecciones
Articulos (ICIFI)
Articulos de INSTITUTO DE CIENCIAS FISICAS
Articulos de INSTITUTO DE CIENCIAS FISICAS
Citación
Ferreyra, Romualdo Alejandro; Li, Bingjun; Wang, Sizhen; Han, Jung; Selective area doping of GaN towards high-power applications; IOP Publishing; Journal of Physics D: Applied Physics; 56; 37; 5-2023; 1-16
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