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dc.contributor.author
Rahouma, Ahmed
dc.contributor.author
Oggier, German Gustavo
dc.contributor.author
Balda, Juan Carlos
dc.contributor.author
Kashyap, Avinash
dc.date.available
2023-12-29T10:39:37Z
dc.date.issued
2022
dc.identifier.citation
Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diodes; 2022 IEEE Energy Conversion Congress and Exposition (ECCE 2022); Estados Unidos; 2022; 1-5
dc.identifier.isbn
978-1-7281-9387-8
dc.identifier.uri
http://hdl.handle.net/11336/221867
dc.description.abstract
The innovation pace of modern and future power electronic systems such as energy storage systems and D-FACTs is driving the utilization of H.V. SiC MOSFETs. This paperpresents the static and dynamic characterization of two configurations of a 3.3-kV SiC MOSFET half-bridge power module. The freewheeling diode in the first configuration is the body diode of the MOSFET. In contrast, the second configuration consists of both the body diode and an external anti-parallel SiC junction barrier Schottky (JBS) diode per switching position. The static and dynamic characteristics of these two configurations are investigated and compared at different junction temperatures. Unlike other evaluations, the comparison shows that the second configuration increased switching losses, switching times, and drain current overshoots. However, it decreased drain-to-source voltage overshoot and slew rates compared with the first configuration.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Institute of Electrical and Electronics Engineers
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
DOUBLE PULSE TEST
dc.subject
MEDIUM VOLTAGE
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SIC JBS DIODE AND SIC MOSFET
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SWITCHING LOSSES
dc.subject.classification
Ingeniería Eléctrica y Electrónica
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Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diodes
dc.type
info:eu-repo/semantics/publishedVersion
dc.type
info:eu-repo/semantics/conferenceObject
dc.type
info:ar-repo/semantics/documento de conferencia
dc.date.updated
2023-12-11T14:10:18Z
dc.journal.pagination
1-5
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Detroit
dc.description.fil
Fil: Rahouma, Ahmed. University of Arkansas; Estados Unidos
dc.description.fil
Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
dc.description.fil
Fil: Balda, Juan Carlos. University of Arkansas; Estados Unidos
dc.description.fil
Fil: Kashyap, Avinash. University of Arkansas; Estados Unidos
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/9947544
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/ECCE50734.2022.9947544
dc.conicet.rol
Autor
dc.conicet.rol
Autor
dc.conicet.rol
Autor
dc.conicet.rol
Autor
dc.coverage
Internacional
dc.type.subtype
Otro
dc.description.nombreEvento
2022 IEEE Energy Conversion Congress and Exposition (ECCE 2022)
dc.date.evento
2022-10-09
dc.description.paisEvento
Estados Unidos
dc.type.publicacion
Book
dc.description.institucionOrganizadora
Institute of Electrical and Electronics Engineers
dc.source.libro
2022 IEEE Energy Conversion Congress and Exposition (ECCE 2022)
dc.date.eventoHasta
2022-10-13
dc.type
Otro
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