Artículo

Radiation sensor based on MOSFETs mismatch amplification for radiotherapy applications

Garcia Inza, Mariano AndrésIcon ; Carbonetto, Sebastián HoracioIcon ; Lipovetzky, JoséIcon ; Faigon, Adrian NestorIcon
Fecha de publicación: 06/2016
Editorial: Institute of Electrical and Electronics Engineers
Revista: Ieee Transactions on Nuclear Science
ISSN: 0018-9499
e-ISSN: 1558-1578
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

In this paper we present a new dosimeter based on a pair of thick gate oxide MOSFET sensors. A differential circuit topology with a feedback loop provides stabilized output with selectable sensitivity amplification for real time in vivo dosimetry. Radiation response shows a wide linear output range and an effective thermal rejection. These properties make this circuit suitable for dose control in radiotherapy applications.
Palabras clave: Mosfet Dosimeter , Radiotherapy , Ionizing Radiation , Solid-State Detectors
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/20123
URL: http://ieeexplore.ieee.org/document/7464334/
DOI: http://dx.doi.org/10.1109/TNS.2016.2560172
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Articulos(INTECIN)
Articulos de INST.D/TEC.Y CS.DE LA ING."HILARIO FERNANDEZ LONG"
Citación
Garcia Inza, Mariano Andrés; Carbonetto, Sebastián Horacio; Lipovetzky, José; Faigon, Adrian Nestor; Radiation sensor based on MOSFETs mismatch amplification for radiotherapy applications; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 3; 6-2016; 1784-1789
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