Artículo

Model and fitting results for the filamentary conduction in MIM resistive switching devices

Palumbo, Félix Roberto MarioIcon ; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.
Fecha de publicación: 10/2011
Editorial: Electrochemical Society Inc.
Revista: Electrochemical Society ECS Transactions
ISSN: 1938-5862
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the two-terminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.
Palabras clave: resistive switching , MIM , Dielectric Breakdown
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
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URI: http://hdl.handle.net/11336/194555
URL: https://iopscience.iop.org/article/10.1149/1.3615193
DOI: http://dx.doi.org/10.1149/1.3615193
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Citación
Palumbo, Félix Roberto Mario; Miranda, Enrique; Ghibaudo, Gerard; Jousseaume, V.; Model and fitting results for the filamentary conduction in MIM resistive switching devices; Electrochemical Society Inc.; Electrochemical Society ECS Transactions; 39; 1; 10-2011; 187-193
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