Artículo
Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
Fecha de publicación:
09/2021
Editorial:
Institute of Advanced Engineering and Science
Revista:
International Journal of Power Electronics and Drive Systems
ISSN:
2088-8694
e-ISSN:
2722-256X
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.
Palabras clave:
GAN
,
GATE DRIVER
,
PERFORMANCE
,
SIC
Archivos asociados
Tamaño:
820.7Kb
Formato:
PDF
Licencia
Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción:
Creative Commons Attribution-ShareAlike 2.5 Unported (CC BY-SA 2.5)
Identificadores
Colecciones
Articulos (UE-INN - NODO BARILOCHE)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO BARILOCHE
Citación
Carra, Martin Javier; Tacca, Hernán Emilio; Lipovetzky, José; Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch; Institute of Advanced Engineering and Science; International Journal of Power Electronics and Drive Systems; 12; 3; 9-2021; 1293-1303
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