Artículo
Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs
Vega, Nahuel Agustín
; Dadgar, Armin; Strittmatter, Andre; Challa, Seshagiri R.; Ferreyra, Romualdo Alejandro
; Kristukat, Christian; Muller, Nahuel A.; Debray, Mario Ernesto; Schmidt, Gordon; Witte, Hartmut; Christen, Jurgen
Fecha de publicación:
10/2019
Editorial:
Institute of Electrical and Electronics Engineers
Revista:
Ieee Transactions on Nuclear Science
ISSN:
0018-9499
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
AlInN/GaN heterostructure field-effect transistors (HFETs) grown on silicon withstand irradiation with 75-MeV sulfur ions up to fluences of 5.5 times 10 ^{13} ions/cm2. The static transistor operation characteristics of the devices exhibit a shift of the threshold voltage and a decrease in the saturation and the OFF-state current. Microphotoluminescence spectroscopy reveals a decrease in the electron carrier density in the channel region. Simulations were performed to model the damage caused to the devices assuming the generation of acceptor-like defects upon irradiation. It turns out that the degradation depends on the thickness of the buffer layer. Therefore, we propose the reduction in the thickness of the buffer layer as a way to increase the radiation tolerance of HFETs.
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Citación
Vega, Nahuel Agustín; Dadgar, Armin; Strittmatter, Andre; Challa, Seshagiri R.; Ferreyra, Romualdo Alejandro; et al.; Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 66; 12; 10-2019; 2417-2421
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