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dc.contributor.author
Ferreyra, Romualdo Alejandro  
dc.contributor.author
Quiroga, Matías Abel Oscar  
dc.date.available
2022-10-13T14:16:48Z  
dc.date.issued
2021-04  
dc.identifier.citation
Ferreyra, Romualdo Alejandro; Quiroga, Matías Abel Oscar; Ge-GaN deposition: An assistant kMC model; Elsevier Science; Applied Surface Science; 546; 4-2021; 1-8  
dc.identifier.issn
0169-4332  
dc.identifier.uri
http://hdl.handle.net/11336/172986  
dc.description.abstract
The present work provides a parametric simulation tool to assist the experimental deposition of GaN and Ge-GaN material. For this purpose, a kinetic Monte Carlo (kMC) model was developed and implemented to simulate the deposition, diffusion, and desorption of Ge, Ga, and N and subsequent material growth on GaN (0001). The kMC is a Monte Carlo algorithm that simulates the dynamics of a given on-the-lattice system by computing on-the-fly every event rate. In the present model, the deposition rates were computed by means of the collision theory and the diffusion and desorption rates were calculated with the usual Arrhenius form based on knowledge of the activation energies and the local energy configuration. Ge diffusion energies as well as experimental deposition conditions were simulated to investigate their impact on the resulting Ge-GaN layers. Proposed kMC model outcomes, which are consistent with the observed experimental results, are discussed in detail and conclusions are provided.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Elsevier Science  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
GAN  
dc.subject
GANDOPING  
dc.subject
HETEROSTRUCTURE FIELD EFFECT TRANSISTOR (HFET)  
dc.subject
KINETIC MONTE CARLO (KMC) MODELING  
dc.subject
NON-ALLOYED OHMIC CONTACT  
dc.subject
REGROWN CONTACT  
dc.subject.classification
Recubrimientos y Películas  
dc.subject.classification
Ingeniería de los Materiales  
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS  
dc.title
Ge-GaN deposition: An assistant kMC model  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2021-12-13T18:56:37Z  
dc.journal.volume
546  
dc.journal.pagination
1-8  
dc.journal.pais
Países Bajos  
dc.journal.ciudad
Amsterdam  
dc.description.fil
Fil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; Argentina  
dc.description.fil
Fil: Quiroga, Matías Abel Oscar. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina  
dc.journal.title
Applied Surface Science  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0169433221002087  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.apsusc.2021.149132