Mostrar el registro sencillo del ítem
dc.contributor.author
Ferreyra, Romualdo Alejandro
dc.contributor.author
Quiroga, Matías Abel Oscar
dc.date.available
2022-10-13T14:16:48Z
dc.date.issued
2021-04
dc.identifier.citation
Ferreyra, Romualdo Alejandro; Quiroga, Matías Abel Oscar; Ge-GaN deposition: An assistant kMC model; Elsevier Science; Applied Surface Science; 546; 4-2021; 1-8
dc.identifier.issn
0169-4332
dc.identifier.uri
http://hdl.handle.net/11336/172986
dc.description.abstract
The present work provides a parametric simulation tool to assist the experimental deposition of GaN and Ge-GaN material. For this purpose, a kinetic Monte Carlo (kMC) model was developed and implemented to simulate the deposition, diffusion, and desorption of Ge, Ga, and N and subsequent material growth on GaN (0001). The kMC is a Monte Carlo algorithm that simulates the dynamics of a given on-the-lattice system by computing on-the-fly every event rate. In the present model, the deposition rates were computed by means of the collision theory and the diffusion and desorption rates were calculated with the usual Arrhenius form based on knowledge of the activation energies and the local energy configuration. Ge diffusion energies as well as experimental deposition conditions were simulated to investigate their impact on the resulting Ge-GaN layers. Proposed kMC model outcomes, which are consistent with the observed experimental results, are discussed in detail and conclusions are provided.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier Science
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
GAN
dc.subject
GANDOPING
dc.subject
HETEROSTRUCTURE FIELD EFFECT TRANSISTOR (HFET)
dc.subject
KINETIC MONTE CARLO (KMC) MODELING
dc.subject
NON-ALLOYED OHMIC CONTACT
dc.subject
REGROWN CONTACT
dc.subject.classification
Recubrimientos y Películas
dc.subject.classification
Ingeniería de los Materiales
dc.subject.classification
INGENIERÍAS Y TECNOLOGÍAS
dc.title
Ge-GaN deposition: An assistant kMC model
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2021-12-13T18:56:37Z
dc.journal.volume
546
dc.journal.pagination
1-8
dc.journal.pais
Países Bajos
dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; Argentina
dc.description.fil
Fil: Quiroga, Matías Abel Oscar. Universidad Nacional del Centro de la Provincia de Buenos Aires. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires. - Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina
dc.journal.title
Applied Surface Science
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0169433221002087
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.apsusc.2021.149132
Archivos asociados