Artículo
Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
Ferreyra, Cristian Daniel
; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique
; Bengió, Silvina
; Lecourt, J.; Lüders, U.; Rubi, Diego
Fecha de publicación:
01/2020
Editorial:
IOP Publishing
Revista:
Nanotechnology
ISSN:
0957-4484
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide - Ta-oxide - and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple - analogic - intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
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Articulos (UE-INN - NODO CONSTITUYENTES)
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO CONSTITUYENTES
Articulos de UNIDAD EJECUTORA INSTITUTO DE NANOCIENCIA Y NANOTECNOLOGIA - NODO CONSTITUYENTES
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Ferreyra, Cristian Daniel; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique; Bengió, Silvina; et al.; Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale; IOP Publishing; Nanotechnology; 31; 15; 1-2020; 1-24
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