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dc.contributor.author
Di Liscia, Emiliano Javier
dc.contributor.author
Reinoso, Maria Elba
dc.contributor.author
Alvarez, F.
dc.contributor.author
Huck, Hugo Alberto
dc.date.available
2021-01-18T18:54:37Z
dc.date.issued
2019-07-01
dc.identifier.citation
Di Liscia, Emiliano Javier; Reinoso, Maria Elba; Alvarez, F.; Huck, Hugo Alberto; Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane; Springer; Applied Physics A: Materials Science and Processing; 125; 484; 1-7-2019; 1-5
dc.identifier.issn
0947-8396
dc.identifier.uri
http://hdl.handle.net/11336/122894
dc.description.abstract
Silicon-vacancy color centers in diamond microcrystals were produced by means of a novel proceeding: chemical vapor deposition using a solution of tetramethoxysilane in ethanol as precursor. The use of these precursors allows achieving a precise control over doping without the difficulties inherent in the more commonly used solid silicon or silane. We managed to obtain good-quality crystals and found the TMOS/ethanol ratio to optimize the photoluminescence (PL) intensity. The samples were characterized by Raman and PL spectroscopies. PL behavior intensity with different doping was found similar to that of single crystal doped with silane. The maximum PL intensity was achieved by a 4 × 10−2 molar fraction of tetramethoxysilane in ethanol.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Springer
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Silicon doped diamond
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Silicon-vacancy color center
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Diamond photoluminescence
dc.subject.classification
Física de los Materiales Condensados
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2021-01-13T18:58:05Z
dc.journal.volume
125
dc.journal.number
484
dc.journal.pagination
1-5
dc.journal.pais
Alemania
dc.description.fil
Fil: Di Liscia, Emiliano Javier. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
dc.description.fil
Fil: Reinoso, Maria Elba. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
dc.description.fil
Fil: Alvarez, F.. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Huck, Hugo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.journal.title
Applied Physics A: Materials Science and Processing
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://link.springer.com/10.1007/s00339-019-2773-8
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1007/s00339-019-2773-8