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dc.contributor.author
Di Liscia, Emiliano Javier  
dc.contributor.author
Reinoso, Maria Elba  
dc.contributor.author
Alvarez, F.  
dc.contributor.author
Huck, Hugo Alberto  
dc.date.available
2021-01-18T18:54:37Z  
dc.date.issued
2019-07-01  
dc.identifier.citation
Di Liscia, Emiliano Javier; Reinoso, Maria Elba; Alvarez, F.; Huck, Hugo Alberto; Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane; Springer; Applied Physics A: Materials Science and Processing; 125; 484; 1-7-2019; 1-5  
dc.identifier.issn
0947-8396  
dc.identifier.uri
http://hdl.handle.net/11336/122894  
dc.description.abstract
Silicon-vacancy color centers in diamond microcrystals were produced by means of a novel proceeding: chemical vapor deposition using a solution of tetramethoxysilane in ethanol as precursor. The use of these precursors allows achieving a precise control over doping without the difficulties inherent in the more commonly used solid silicon or silane. We managed to obtain good-quality crystals and found the TMOS/ethanol ratio to optimize the photoluminescence (PL) intensity. The samples were characterized by Raman and PL spectroscopies. PL behavior intensity with different doping was found similar to that of single crystal doped with silane. The maximum PL intensity was achieved by a 4 × 10−2 molar fraction of tetramethoxysilane in ethanol.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
Springer  
dc.rights
info:eu-repo/semantics/restrictedAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
Silicon doped diamond  
dc.subject
Silicon-vacancy color center  
dc.subject
Diamond photoluminescence  
dc.subject.classification
Física de los Materiales Condensados  
dc.subject.classification
Ciencias Físicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2021-01-13T18:58:05Z  
dc.journal.volume
125  
dc.journal.number
484  
dc.journal.pagination
1-5  
dc.journal.pais
Alemania  
dc.description.fil
Fil: Di Liscia, Emiliano Javier. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina  
dc.description.fil
Fil: Reinoso, Maria Elba. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina  
dc.description.fil
Fil: Alvarez, F.. Comisión Nacional de Energía Atómica; Argentina  
dc.description.fil
Fil: Huck, Hugo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica; Argentina  
dc.journal.title
Applied Physics A: Materials Science and Processing  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://link.springer.com/10.1007/s00339-019-2773-8  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1007/s00339-019-2773-8  

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