Artículo

Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane

Di Liscia, Emiliano Javier; Reinoso, Maria ElbaIcon ; Alvarez, F.; Huck, Hugo Alberto
Fecha de publicación: 01/07/2019
Editorial: Springer
Revista: Applied Physics A: Materials Science and Processing
ISSN: 0947-8396
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

Silicon-vacancy color centers in diamond microcrystals were produced by means of a novel proceeding: chemical vapor deposition using a solution of tetramethoxysilane in ethanol as precursor. The use of these precursors allows achieving a precise control over doping without the difficulties inherent in the more commonly used solid silicon or silane. We managed to obtain good-quality crystals and found the TMOS/ethanol ratio to optimize the photoluminescence (PL) intensity. The samples were characterized by Raman and PL spectroscopies. PL behavior intensity with different doping was found similar to that of single crystal doped with silane. The maximum PL intensity was achieved by a 4 × 10−2 molar fraction of tetramethoxysilane in ethanol.
Palabras clave: Silicon doped diamond , Silicon-vacancy color center , Diamond photoluminescence
 
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info:eu-repo/semantics/restrictedAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/122894
URL: http://link.springer.com/10.1007/s00339-019-2773-8
DOI: http://dx.doi.org/10.1007/s00339-019-2773-8
Colecciones
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Citación
Di Liscia, Emiliano Javier; Reinoso, Maria Elba; Alvarez, F.; Huck, Hugo Alberto; Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane; Springer; Applied Physics A: Materials Science and Processing; 125; 484; 1-7-2019; 1-5
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