Displacement Damage in CMOS Image Sensors after Thermal Neutron Irradiation

In this work CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy and SIMNRA simulation were used to confirm that the sensors contain Boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and Lithium-7 ions in the Silicon active volume of the sensors after Boron-10 thermal neutron capture.

Palabras clave: ACTIVE PIXEL SENSORS , ALPHA PARTICLES , BOROPHOSPHOSILICATE-GLASS (BPSG) , CMOS IMAGE SENSORS , CMOS TECHNOLOGY , IONIZING RADIATION , NEUTRON RADIATION EFFECTS , THERMAL NEUTRON , X-RAYS

Ver el registro completo

Archivos asociados

Tamaño: 743.9Kb

Formato: PDF

Descargar

Licencia

Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)

Identificadores

URI: http://hdl.handle.net/11336/102309

URL: https://ieeexplore.ieee.org/document/8482500/

DOI: http://dx.doi.org/10.1109/TNS.2018.2874191

Colecciones

Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE

Citación

Alcalde Bessia, Fabricio Pablo; Pérez, Martín; Sofo Haro, Miguel Francisco; Sidelnik, Iván Pedro; Blostein, Juan Jeronimo; et al.; Displacement Damage in CMOS Image Sensors after Thermal Neutron Irradiation; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 65; 11; 10-2018; 2793-2801

Altmétricas