Artículo
Enhanced thermoelectric response in the fractional quantum Hall effect
Fecha de publicación:
12/02/2018
Editorial:
American Physical Society
Revista:
Physical Review B
ISSN:
2469-9969
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν=1/m within Laughlin series. We calculate the figure of merit ZT for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that ZT and the Seebeck coefficient increase with m.
Palabras clave:
Topological
,
Spin-Hall
,
Thermoelectric
,
Quantum
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Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos(SEDE CENTRAL)
Articulos de SEDE CENTRAL
Articulos de SEDE CENTRAL
Citación
Roura Bas, Pablo Gines; Arrachea, Liliana del Carmen; Fradkin, Eduardo; Enhanced thermoelectric response in the fractional quantum Hall effect; American Physical Society; Physical Review B; 97; 8; 12-2-2018; 1-6; 081104
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