Artículo

Atomic surrounding of Co implanted in AlN at high energy

Traverse, Agnès; Delobbe, Anne; Zanghi, Didier; Rentería, MarioIcon ; Gailhanou, Marc
Fecha de publicación: 03/2001
Editorial: Wiley Blackwell Publishing, Inc
Revista: Journal of Synchrotron Radiation
ISSN: 0909-0495
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.
Palabras clave: ALN , COBALT , ION IMPLANTATION
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/98129
DOI: https://doi.org/10.1107/S0909049500012632
URL: https://scripts.iucr.org/cgi-bin/paper?ot5434
Colecciones
Articulos(IFLP)
Articulos de INST.DE FISICA LA PLATA
Citación
Traverse, Agnès; Delobbe, Anne; Zanghi, Didier; Rentería, Mario; Gailhanou, Marc; Atomic surrounding of Co implanted in AlN at high energy; Wiley Blackwell Publishing, Inc; Journal of Synchrotron Radiation; 8; 2; 3-2001; 514-516
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