Growth diversity in one dimensional fluctuating interfaces

Abstract

A set of one dimensional interfaces involving attachment and detachment of k-particle neighbors is studied numerically using both large scale simulations and finite size scaling analysis. A labeling algorithm introduced by Barma and Dhar in related spin Hamiltonians enables to characterize the asymptotic behavior of the interface width according to the initial state of the substrate. For equal deposition--evaporation probability rates it is found that in most cases the initial conditions induce regimes of saturated width. In turn, scaling exponents obtained for initially flat interfaces indicate power law growths which depend on k. In contrast, for unequal probability rates the interface width exhibits a logarithmic growth for all k > 1 regardless of the initial state of the substrate.