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dc.contributor.author
Clemente, Juan Antonio
dc.contributor.author
Hubert, Guillaume
dc.contributor.author
Fraire, Juan Andres
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Franco, Francisco J.
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Villa, Francesca
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Rey, Solenne
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Baylac, Maud
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Puchner, Helmut
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Mecha, Hortensia
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Velazco, Raoul
dc.date.available
2020-01-03T16:51:10Z
dc.date.issued
2018-08-01
dc.identifier.citation
Clemente, Juan Antonio; Hubert, Guillaume; Fraire, Juan Andres; Franco, Francisco J.; Villa, Francesca; et al.; SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 65; 8; 1-8-2018; 1858-1865
dc.identifier.issn
0018-9499
dc.identifier.uri
http://hdl.handle.net/11336/93410
dc.description.abstract
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations of commercial off-the-shelf static random access memories (SRAMs) manufactured in 130-, 90-, and 65-nm CMOS processes. For this purpose, radiation tests with 14.2-MeV neutrons were performed for SRAM power supplies ranging from 0.5 to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool multiscales single event phenomena predictive platform. Large-scale single event latchups and single event functional interrupts (SEFIs), observed in the 90- and 130-nm SRAMs, respectively, are also presented and discussed.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Institute of Electrical and Electronics Engineers
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
COMMERCIAL OFF-THE-SHELF (COTS)
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LOW BIAS VOLTAGE
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NEUTRON TESTS
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RADIATION HARDNESS
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RELIABILITY
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SOFT ERROR
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STATIC RANDOM ACCESS MEMORIES (SRAM)
dc.subject.classification
Ciencias de la Computación
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Ciencias de la Computación e Información
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CIENCIAS NATURALES Y EXACTAS
dc.title
SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-10-22T17:52:13Z
dc.journal.volume
65
dc.journal.number
8
dc.journal.pagination
1858-1865
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Nueva York
dc.description.fil
Fil: Clemente, Juan Antonio. Universidad Complutense de Madrid; España
dc.description.fil
Fil: Hubert, Guillaume. Office National d'Etudes et de Recherches Aérospatiales; Francia
dc.description.fil
Fil: Fraire, Juan Andres. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba; Argentina. Université Grenoble-Alpes; Francia. Universidad Nacional de Córdoba; Argentina
dc.description.fil
Fil: Franco, Francisco J.. Universidad Complutense de Madrid; España
dc.description.fil
Fil: Villa, Francesca. Université Grenoble-Alpes; Francia
dc.description.fil
Fil: Rey, Solenne. Université Grenoble-Alpes; Francia
dc.description.fil
Fil: Baylac, Maud. Université Grenoble-Alpes; Francia
dc.description.fil
Fil: Puchner, Helmut. Cypress Semiconductor Corporation; Estados Unidos
dc.description.fil
Fil: Mecha, Hortensia. Universidad Complutense de Madrid; España
dc.description.fil
Fil: Velazco, Raoul. Universidad Nacional de Córdoba; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba; Argentina. Université Grenoble-Alpes; Francia
dc.journal.title
Ieee Transactions on Nuclear Science
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1109/TNS.2018.2800905
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8278278
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