Artículo
Binding of two-electron metastable states in semiconductor quantum dots under a magnetic field
Fecha de publicación:
16/03/2018
Editorial:
IOP Publishing
Revista:
Journal of Physics B: Atomic, Molecular and Optical Physics
ISSN:
0953-4075
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Applying a strong enough magnetic field results in the binding of few-electron resonant states. The mechanism was proposed many years ago but its verification in laboratory conditions is far more recent. In this work we study the binding of two-electron resonant states. The electrons are confined in a cylindrical quantum dot which is embedded in a semiconductor wire. The geometry considered is similar to the one used in actual experimental setups. The low-energy two-electron spectrum is calculated numerically from an effective-mass approximation Hamiltonian modelling the system. Methods for binding threshold calculations in systems with one and two electrons are thoroughly studied; in particular, we use quantum information quantities to assess when the strong lateral confinement approximation can be used to obtain reliable low-energy spectra. For simplicity, only cases without bound states in the absence of an external field are considered. Under these conditions, the binding threshold for the one-electron case is given by the lowest Landau energy level. Moreover, the energy of the one-electron bounded resonance can be used to obtain the two-electron binding threshold. It is shown that for realistic values of the two-electron model parameters it is feasible to bind resonances with field strengths of a few tens of tesla.
Palabras clave:
MECÁNICA CUÁNTICA
,
PUNTOS CUÁNTICOS
,
ESTADOS RESONANTES
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Articulos(IFEG)
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Articulos de INST.DE FISICA ENRIQUE GAVIOLA
Citación
Garagiola, Mariano; Pont, Federico Manuel; Osenda, Omar; Binding of two-electron metastable states in semiconductor quantum dots under a magnetic field; IOP Publishing; Journal of Physics B: Atomic, Molecular and Optical Physics; 51; 7; 16-3-2018; 1-23
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