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dc.contributor.author
Roman Acevedo, Wilson Stibens
dc.contributor.author
Ferreyra, Cristian Daniel
dc.contributor.author
Sánchez, M.J.
dc.contributor.author
Acha, Carlos Enrique
dc.contributor.author
Gay, R.
dc.contributor.author
Rubi, Diego
dc.date.available
2019-11-21T19:22:25Z
dc.date.issued
2018-02
dc.identifier.citation
Roman Acevedo, Wilson Stibens; Ferreyra, Cristian Daniel; Sánchez, M.J.; Acha, Carlos Enrique; Gay, R.; et al.; Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface; IOP Publishing; Journal of Physics D: Applied Physics; 51; 12; 2-2018; 1-13
dc.identifier.issn
0022-3727
dc.identifier.uri
http://hdl.handle.net/11336/89448
dc.description.abstract
The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
IOP Publishing
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.subject
Memory devices
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Memristor
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Electrical conduction
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Interfaces
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Física de los Materiales Condensados
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Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-10-15T17:28:13Z
dc.journal.volume
51
dc.journal.number
12
dc.journal.pagination
1-13
dc.journal.pais
Reino Unido
dc.journal.ciudad
Londres
dc.description.fil
Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Sánchez, M.J.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
dc.description.fil
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina
dc.description.fil
Fil: Gay, R.. Centro de Investigación Cooperativo nanoGUNE; España
dc.description.fil
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
dc.journal.title
Journal of Physics D: Applied Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/aaaed6
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1088/1361-6463/aaaed6
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