Artículo

On the beneficial role of noise in resistive switching

Patterson, Germán AgustínIcon ; Fierens, Pablo IgnacioIcon ; Grosz, Diego FernandoIcon
Fecha de publicación: 08/2013
Editorial: American Institute of Physics
Revista: Applied Physics Letters
ISSN: 0003-6951
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavior. We find that experimental results can be related to general characteristics of the equations governing the system dynamics.
Palabras clave: RESISTIVE SWITCHING , MEMRISTOR , STOCHASTIC SYSTEMS
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/86252
DOI: http://dx.doi.org/10.1063/1.4819018
URL: https://aip.scitation.org/doi/10.1063/1.4819018
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Citación
Patterson, Germán Agustín; Fierens, Pablo Ignacio; Grosz, Diego Fernando; On the beneficial role of noise in resistive switching; American Institute of Physics; Applied Physics Letters; 103; 7; 8-2013; 74102-74106
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