Artículo
Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
Fecha de publicación:
11/2002
Editorial:
American Institute of Physics
Revista:
Journal of Applied Physics
ISSN:
0021-8979
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region has not yet been established. In this work, n/p junctions were formed by Ar++ implantation on MCT (111) grown by the isothermal vapor phase epitaxy method. Structural damage after implantation for different implantation doses (10 13, 1014, 1015Ar++/cm2) was evaluated by transmission electron microscopy. At high doses, damage distribution exhibits a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone exhibited small dislocation loops. The observed n-type behavior after implantation was attributed to the generation and diffusion of Hg from the damaged region.
Palabras clave:
Tem
,
Implantation
,
Hgcdte
,
Defects
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(UNIDEF)
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Citación
Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature; American Institute of Physics; Journal of Applied Physics; 92; 10; 11-2002; 5745-5748
Compartir
Altmétricas