Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models

Abstract

The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J 0 ) and the series resistance (R s ) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu 2 O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J 0 and R s has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J 01 and J 02 ). The power conversion efficiency (PCE) has shown to be more strongly dependent on J 02 than on J 01 . Results obtained in this work can be used to improve the manufacturing process of these devices.