Artículo
Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors
Fecha de publicación:
12/2008
Editorial:
American Institute of Physics
Revista:
Journal of Applied Physics
ISSN:
0021-8979
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Conditions for reversal of the voltage shift in chemically sensitive metal oxide semiconductor capacitors are surveyed with the pulsed illumination technique in SiSi O2 Me0 capacitors, with annular Pd and Au gates under controlled H2 in N2 and N O2 in synthetic air stimuli, respectively. The polarity of the response is bias dependent. Above the threshold voltage, negative voltage shifts ensue from positive charges accumulated on the gate-dielectric interface for donor stimuli such as H2, whereas positive shifts indicate negative charge accumulation for acceptors such as N O2. Below the threshold voltage, the necessary charge compensation can be satisfied by proportional changes in the semiconductor-gate interface state population, which induce chemical shifts of opposite polarity.
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Articulos(UNIDEF)
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Citación
Lombardi, R.; Aragon, Ricardo; Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors; American Institute of Physics; Journal of Applied Physics; 103; 9; 12-2008; 1-7
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