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dc.contributor.author
Bojorge, Claudia Daniela
dc.contributor.author
Canepa, Horacio Ricardo
dc.contributor.author
Gilabert, Ulises Eduardo
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Silva, D.
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Dalchiele, E. A.
dc.contributor.author
Marotti, R. E.
dc.date.available
2019-08-22T21:56:26Z
dc.date.issued
2007-11
dc.identifier.citation
Bojorge, Claudia Daniela; Canepa, Horacio Ricardo; Gilabert, Ulises Eduardo; Silva, D.; Dalchiele, E. A.; et al.; Synthesis and optical characterization of ZnO and ZnO:Al nanocrystalline films obtained by the sol-gel dip-coating process; Springer; Journal of Materials Science: Materials in Electronics; 18; 11; 11-2007; 1119-1125
dc.identifier.issn
0957-4522
dc.identifier.uri
http://hdl.handle.net/11336/82007
dc.description.abstract
Zinc oxide is obtained by the sol-gel process. The precursor solution was deposited on quartz substrates by dip-coating. The as-deposited films are transformed into nanocrystalline pure or aluminium-doped ZnO after thermal treatment. The microstructure was studied by X-ray diffraction and the nanocrystallite size was estimated using Scherrer equation. The optical transmittance in the visible region is between 83 and 91%. A direct absorption edge is observed with bandgap energies between 3.27 and 3.31 eV for the undoped samples, and between 3.30 and 3.35 eV for the Al doped ZnO. These values correlate well with the nanocrystal sizes following two different laws for the undoped and doped samples, due to Moss-Burstein shift. The visible transmittance also increases for higher bandgap energies. The UV transmittance is greater than 50% due to the small thickness of the films, which for the undoped samples is proportional to the number of layers.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Springer
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Zno
dc.subject
Dip-Coating
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Gisaxs
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Xr
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Nano-materiales
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Nanotecnología
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Synthesis and optical characterization of ZnO and ZnO:Al nanocrystalline films obtained by the sol-gel dip-coating process
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2019-08-22T13:20:32Z
dc.journal.volume
18
dc.journal.number
11
dc.journal.pagination
1119-1125
dc.journal.pais
Alemania
dc.journal.ciudad
Berlin
dc.description.fil
Fil: Bojorge, Claudia Daniela. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. YPF - Tecnología; Argentina
dc.description.fil
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
dc.description.fil
Fil: Gilabert, Ulises Eduardo. Secretaria de Industria y Mineria. Servicio Geológico Minero Argentino. Instituto de Tecnología Minera; Argentina
dc.description.fil
Fil: Silva, D.. Universidad de la República; Uruguay
dc.description.fil
Fil: Dalchiele, E. A.. Universidad de la República; Uruguay
dc.description.fil
Fil: Marotti, R. E.. Universidad de la República; Uruguay
dc.journal.title
Journal of Materials Science: Materials in Electronics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007/s10854-007-9274-9
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/https://doi.org/10.1007/s10854-007-9274-9
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