Artículo
MOS Device Chemical Response to Acceptor Stimuli
Fecha de publicación:
12/2012
Editorial:
International Frequency Sensor Association
Revista:
Sensors & Transducers Journal
ISSN:
1726-5479
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.
Palabras clave:
Chemical Sensors
,
Gas Detectors
,
Mos Devices
,
No2 So2
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(UNIDEF)
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Articulos de UNIDAD DE INVESTIGACION Y DESARROLLO ESTRATEGICOS PARA LA DEFENSA
Citación
Lombardi, Rina; Aragon, Ricardo; Medina, Hector A.; MOS Device Chemical Response to Acceptor Stimuli; International Frequency Sensor Association; Sensors & Transducers Journal; 147; 12; 12-2012; 143-150
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