Artículo
a-Si:H transport parameters from experiments based on photoconductivity
Fecha de publicación:
09/2012
Editorial:
Elsevier Science
Revista:
Journal of Non-crystalline Solids
ISSN:
0022-3093
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.
Palabras clave:
Photoconductivity
,
Density of States
,
Hydrogenated Amorphous Silicon
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Articulos(INTEC)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Articulos de INST.DE DES.TECNOL.PARA LA IND.QUIMICA (I)
Citación
Longeaud, C.; Schmidt, Javier Alejandro; a-Si:H transport parameters from experiments based on photoconductivity; Elsevier Science; Journal of Non-crystalline Solids; 358; 17; 9-2012; 2052-2056
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