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dc.contributor.author
Tamborenea, Pablo Ignacio  
dc.contributor.author
Weinmann, Dietmar  
dc.contributor.author
Jalabert, Rodolfo  
dc.date.available
2019-01-07T15:17:14Z  
dc.date.issued
2007-12  
dc.identifier.citation
Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo; Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 76; 8; 12-2007; 852091-852096  
dc.identifier.issn
1098-0121  
dc.identifier.uri
http://hdl.handle.net/11336/67523  
dc.description.abstract
We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.  
dc.format
application/pdf  
dc.language.iso
eng  
dc.publisher
American Physical Society  
dc.rights
info:eu-repo/semantics/openAccess  
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/  
dc.subject
Semiconductors  
dc.subject
Spintronics  
dc.subject
Spin-Orbit Interaction  
dc.subject.classification
Astronomía  
dc.subject.classification
Ciencias Físicas  
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS  
dc.title
Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors  
dc.type
info:eu-repo/semantics/article  
dc.type
info:ar-repo/semantics/artículo  
dc.type
info:eu-repo/semantics/publishedVersion  
dc.date.updated
2019-01-02T19:33:15Z  
dc.journal.volume
76  
dc.journal.number
8  
dc.journal.pagination
852091-852096  
dc.journal.pais
Estados Unidos  
dc.journal.ciudad
Nueva York  
dc.description.fil
Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina  
dc.description.fil
Fil: Weinmann, Dietmar. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia  
dc.description.fil
Fil: Jalabert, Rodolfo. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia  
dc.journal.title
Physical Review B: Condensed Matter and Materials Physics  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://prb.aps.org/abstract/PRB/v76/i8/e085209  
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1103/PhysRevB.76.085209