Artículo
Influence of the band bending on the photoconductivity of Li-doped ZnO microwires
Ferreyra, Jorge Mario; Bridoux, German
; Villafuerte, Manuel Jose
; Straube, Benjamin
; Zamora, J.; Figueroa, C. A.; Heluani, S.P.
; Villafuerte, Manuel Jose
; Straube, Benjamin
; Zamora, J.; Figueroa, C. A.; Heluani, S.P.
Fecha de publicación:
05/2017
Editorial:
Pergamon-Elsevier Science Ltd
Revista:
Solid State Communications
ISSN:
0038-1098
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
Combining photoconductivity and photoluminescence measurements we have studied the band bending behavior with the Li-doping content in ZnO microwires. Our results reveal the presence of in-gap acceptor levels with energies ranging from 100 meV to 600 meV above valence band maximum. We have found that the band bending plays an important role in the photoconductivity modifying the life time of the photocarriers and enhancing the near band edge peak of photoluminescence in Li-doped samples. Using a simple model we have evaluated the influence of the band-bending on the relaxation time for the photoconductivity.
Palabras clave:
Zno
,
Li-Doping
,
Band Bending
,
Photoconductivity
Archivos asociados
Tamaño:
1003.Kb
Formato:
PDF
Licencia
Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción:
Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
Colecciones
Articulos(CCT - NOA SUR)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - NOA SUR
Citación
Ferreyra, Jorge Mario; Bridoux, German; Villafuerte, Manuel Jose; Straube, Benjamin; Zamora, J.; et al.; Influence of the band bending on the photoconductivity of Li-doped ZnO microwires; Pergamon-Elsevier Science Ltd; Solid State Communications; 257; 5-2017; 42-46
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