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dc.contributor.author
Makinistian, Leonardo
dc.contributor.author
Albanesi, Eduardo Aldo
dc.date.available
2016-07-15T18:40:25Z
dc.date.issued
2013-05
dc.identifier.citation
Makinistian, Leonardo; Albanesi, Eduardo Aldo; Magneto-electronic properties and spin-resolved I-V curves of a Co/GeSe heterojunction diode: an ab initio study; Springer; Applied Physics A: Materials Science and Processing; 111; 3; 5-2013; 923-927
dc.identifier.issn
0947-8396
dc.identifier.uri
http://hdl.handle.net/11336/6540
dc.description.abstract
We present ab initio calculations of magnetoelectronic and transport properties of the interface of hcp Cobalt (001) and the intrinsic narrow-gap semiconductor germanium selenide (GeSe). Using a norm-conserving pseudopotentials scheme within DFT, we first model the interface with a supercell approach and focus on the spin-resolved densities of states and the magnetic moment (spin and orbital components) at the different atomic layers that form the device. We also report a series of cuts (perpendicular to the plane of the heterojunction) of the electronic and spin densities showing a slight magnetization of the first layers of the semiconductor. Finally, we model the device with a different scheme: using semiinfinite electrodes connected to the heterojunction. These latter calculations are based upon a nonequilibrium Green’s function approach that allows us to explore the spin-resolved electronic transport under a bias voltage (spin-resolved I–V curves), revealing features of potential applicability in spintronics.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Springer
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Magnetoelectronic Transport
dc.subject
Spin Resolved I-V Curves
dc.subject
Heterojunction Diode
dc.subject
Ab-Initio Pseudopotentials
dc.subject.classification
Física de los Materiales Condensados
dc.subject.classification
Ciencias Físicas
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CIENCIAS NATURALES Y EXACTAS
dc.title
Magneto-electronic properties and spin-resolved I-V curves of a Co/GeSe heterojunction diode: an ab initio study
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2016-02-23T16:42:40Z
dc.journal.volume
111
dc.journal.number
3
dc.journal.pagination
923-927
dc.journal.pais
Alemania
dc.journal.ciudad
Berlin
dc.description.fil
Fil: Makinistian, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
dc.description.fil
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Universidad Nacional de Entre Rios; Argentina
dc.journal.title
Applied Physics A: Materials Science and Processing
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://link.springer.com/article/10.1007%2Fs00339-012-7315-6
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1007/s00339-012-7315-6
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/10.1007/s00339-012-7315-6
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