Thermal annealing of photoanodes based on CdSe Qdots sensitized TiO2

Abstract

Thermal annealing of photoanodes made of TiO2 nanotubes sensitized with CdSe quantum dots is studied. Heat treatment of these photoanodes in air can cause either an improvement or a serious drop in the photocurrent generation. Ligands or capping agents stabilize Qdots removing highly reactive dangling bonds on its surface but also they can act as a passivating layer that increases charge transfer resistance between Qdots and TiO2 nanotubes; therefore optimal conditions of thermal annealing are needed to improve efficiency of the interfacial charge transfer avoiding as far as possible the decomposition of the sensitizers. As a corollary of this study, a 2.5-fold increase in photocurrent value was reached after thermal annealing at 200 °C during at least two hours; while thermal treatments at temperature values higher than 250 °C can produce a deleterious effect on the conversion efficiency if the annealing time extends over a long period of time. Photoelectrochemistry, thermogravimetry and SEM microscopy were used as tools to propose a mechanism able to explain the observed behaviour.