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Artículo

On the mechanism of silicon activation by halogen atoms

Soria, Federico ArielIcon ; Patrito, Eduardo MartinIcon ; Paredes Olivera, PatriciaIcon
Fecha de publicación: 03/2011
Editorial: American Chemical Society
Revista: Langmuir
ISSN: 0743-7463
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:
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Resumen

Despite the widespread use of chlorinated silicon as the starting point for further functionalization reactions, the high reactivity of this surface toward a simple polar molecule such as ammonia still remains unclear. We therefore undertook a comprehensive investigation of the factors that govern the reactivity of halogenated silicon surfaces. The reaction of NH3 was investigated comparatively on the Cl-Si(100)-2 × 1, Br-Si(100)-2 × 1, H-Si(100)-2 × 1, and Si(100)-2 × 1 surfaces using density functional theory. The halogenated surfaces show considerable activation with respect to the hydrogenated surface. The reaction on the halogenated surfaces proceeds via the formation of a stable datively bonded complex in which a silicon atom is pentacoordinated. The activation of the halogenated Si(100)-2 × 1 surfaces toward ammonia arises from the large redistribution of charge in the transition state that precedes the breakage of the Si-X bond and the formation of the Si-NH2 bond. This transition state has an ionic nature of the form Si-NH3 +X-. Steric effects also play an important role in surface reactivity, making brominated surfaces less reactive than chlorinated surfaces. The overall activation-energy barriers on the Cl-Si(100)-2 × 1 and Br-Si(100)-2 × 1 surfaces are 12.3 and 19.9 kcal/mol, respectively, whereas on the hydrogenated Si(100)-2 × 1 surface the energy barrier is 38.3 kcal/mol. The reaction of ammonia on the chlorinated surface is even more activated than on the bare Si(100)-2 × 1 surface, for which the activation barrier is 21.3 kcal/mol. Coadsorption effects in partially aminated surfaces and in the presence of reaction products increase activation-energy barriers and have a blocking effect for further reactions of NH3. © 2011 American Chemical Society.
Palabras clave: Superficies , Reacciones Superficiales , Si(100) , Dft
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/61732
DOI: https://dx.doi.org/10.1021/la104701g
URL: https://pubs.acs.org/doi/abs/10.1021/la104701g
Colecciones
Articulos(INFIQC)
Articulos de INST.DE INVESTIGACIONES EN FISICO- QUIMICA DE CORDOBA
Citación
Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; On the mechanism of silicon activation by halogen atoms; American Chemical Society; Langmuir; 27; 6; 3-2011; 2613-2624
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