Artículo
Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model
Fecha de publicación:
01/2009
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets. © 2009 The American Physical Society.
Palabras clave:
Mott Transition
,
Strongly Correlated Electron Systems
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563.2Kb
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Licencia
Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción:
Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Sordi, G.; Amaricci, A.; Rozenberg, Marcelo Javier; Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 80; 3; 1-2009; 35129
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