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dc.contributor.author
Rozenberg, Marcelo Javier
dc.contributor.author
Inoue, I.H.
dc.contributor.author
Granados Sanchez, Maria Jimena
dc.date.available
2018-09-28T14:52:37Z
dc.date.issued
2005-12
dc.identifier.citation
Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27
dc.identifier.issn
0040-6090
dc.identifier.uri
http://hdl.handle.net/11336/61192
dc.description.abstract
The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier Science Sa
dc.rights
info:eu-repo/semantics/restrictedAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Non-Volatile Memory
dc.subject
Resistance Switching
dc.subject.classification
Astronomía
dc.subject.classification
Ciencias Físicas
dc.subject.classification
CIENCIAS NATURALES Y EXACTAS
dc.title
A model for non-volatile electronic memory devices with strongly correlated materials
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2018-09-27T16:13:06Z
dc.journal.volume
486
dc.journal.number
1-2
dc.journal.pagination
24-27
dc.journal.pais
Países Bajos
dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
dc.description.fil
Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos
dc.description.fil
Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
dc.journal.title
Thin Solid Films
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.tsf.2004.10.059


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