Artículo
Nonequilibrium electronic transport in a one-dimensional Mott insulator
Heidrich Meisner, F.; González, Ignacio; Al Hassanieh, K. A.; Feiguin, A. E.; Rozenberg, Marcelo Javier
; Dagotto, Elbio

Fecha de publicación:
10/2010
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. © 2010 The American Physical Society.
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Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Heidrich Meisner, F.; González, Ignacio; Al Hassanieh, K. A.; Feiguin, A. E.; Rozenberg, Marcelo Javier; et al.; Nonequilibrium electronic transport in a one-dimensional Mott insulator; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 82; 20; 10-2010; 205110-205120
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