Artículo
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
Fecha de publicación:
11/2011
Editorial:
Elsevier Science
Revista:
Physica B: Condensed Matter
ISSN:
0921-4526
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved.
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Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Schulman, Alejandro Raúl; Acha, Carlos Enrique; Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces; Elsevier Science; Physica B: Condensed Matter; 407; 16; 11-2011; 3147-3149
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