Artículo
Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling
Fecha de publicación:
01/2012
Editorial:
American Physical Society
Revista:
Physical Review Letters
ISSN:
0031-9007
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time. © 2012 American Physical Society.
Palabras clave:
Semiconductors
,
Spin Relaxation
,
Impurity Band
,
Mott Transition
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Identificadores
Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Intronati, Guido Alfredo; Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo; Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling; American Physical Society; Physical Review Letters; 108; 1; 1-2012; 16601-16605
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