Artículo
Transport mechanism through metal-cobaltite interfaces
Acha, Carlos Enrique
; Schulman, Alejandro Raúl
; Boudard, Miguel Santiago; Daoudi, K.; Tsuchiya, T.
Fecha de publicación:
07/2016
Editorial:
American Institute of Physics
Revista:
Applied Physics Letters
ISSN:
0003-6951
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
The resistive switching (RS) properties as a function of temperature were studied for Ag/La(1−x)SrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.
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Identificadores
Colecciones
Articulos(IFIBA)
Articulos de INST.DE FISICA DE BUENOS AIRES
Articulos de INST.DE FISICA DE BUENOS AIRES
Citación
Acha, Carlos Enrique; Schulman, Alejandro Raúl; Boudard, Miguel Santiago; Daoudi, K.; Tsuchiya, T.; Transport mechanism through metal-cobaltite interfaces; American Institute of Physics; Applied Physics Letters; 109; 7-2016; 11603-11603
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