Artículo
Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene
Guzman Arellano, Robert Mikhail
; Hernandez Nieves, Alexander David
; Balseiro, Carlos Antonio
; Usaj, Gonzalo
Fecha de publicación:
11/05/2015
Editorial:
American Physical Society
Revista:
Physical Review B: Condensed Matter and Materials Physics
ISSN:
1098-0121
Idioma:
Inglés
Tipo de recurso:
Artículo publicado
Clasificación temática:
Resumen
We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the 2p orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.
Palabras clave:
Graphene
,
Adatoms
,
Spin-Orbit
Archivos asociados
Licencia
Identificadores
Colecciones
Articulos(CCT - PATAGONIA NORTE)
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Articulos de CTRO.CIENTIFICO TECNOL.CONICET - PATAGONIA NORTE
Citación
Guzman Arellano, Robert Mikhail; Hernandez Nieves, Alexander David; Balseiro, Carlos Antonio; Usaj, Gonzalo; Gate-induced enhancement of spin-orbit coupling in dilute fluorinated graphene; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 91; 19; 11-5-2015; 195408-195408
Compartir
Altmétricas