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dc.contributor.author
García Molleja, Javier
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Gomez, Bernardo Jose Armando
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Ferron, Julio
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Gautron, Eric
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Burgi, Juan Mauel
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Abdallah, Bassam
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Djouadi, Mohamed Abdou
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Feugeas, Jorge Nestor
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Jouan, Pierre-Yves
dc.date.available
2016-02-25T17:41:40Z
dc.date.issued
2013-11
dc.identifier.citation
García Molleja, Javier; Gomez, Bernardo Jose Armando; Ferron, Julio; Gautron, Eric; Burgi, Juan Mauel; et al.; AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth; EDP Sciences; European Physical Journal Applied Physics; 64; 11-2013; 20302-20302
dc.identifier.issn
1286-0050
dc.identifier.uri
http://hdl.handle.net/11336/4420
dc.description.abstract
Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
EDP Sciences
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Magnetron Sputtering
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Film Growth
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Aluminum Nitride
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Recubrimientos y Películas
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Ingeniería de los Materiales
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2016-03-30 10:35:44.97925-03
dc.journal.volume
64
dc.journal.pagination
20302-20302
dc.journal.pais
Francia
dc.journal.ciudad
Cedex
dc.description.fil
Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina. Institut des Matériaux Jean Rouxel; Francia
dc.description.fil
Fil: Gomez, Bernardo Jose Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
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Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentina
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Fil: Gautron, Eric. Institut des Matériaux Jean Rouxel; Francia
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Fil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
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Fil: Abdallah, Bassam. Institut des Matériaux Jean Rouxel; Francia. Atomic Energy Commission of Syria. Physics Department; Siria
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Fil: Djouadi, Mohamed Abdou. Institut des Matériaux Jean Rouxel; Francia
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Fil: Feugeas, Jorge Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Rosario. Instituto de Física de Rosario (i); Argentina
dc.description.fil
Fil: Jouan, Pierre-Yves . Institut des Matériaux Jean Rouxel; Francia
dc.journal.title
European Physical Journal Applied Physics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/http://epjap.epj.org/articles/epjap/abs/2013/11/ap130445/ap130445.html
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1051/epjap/2013130445
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/issn/1286-0050
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