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dc.contributor.author
Palumbo, Félix Roberto Mario
dc.contributor.author
Debray, Mario Ernesto
dc.contributor.author
Vega, Nahuel Agustín
dc.contributor.author
Quinteros, Cynthia Paula
dc.contributor.author
Kalstein, Ariel
dc.contributor.author
Guarin, F.
dc.date.available
2018-04-27T19:39:03Z
dc.date.issued
2016-02
dc.identifier.citation
Palumbo, Félix Roberto Mario; Debray, Mario Ernesto; Vega, Nahuel Agustín; Quinteros, Cynthia Paula; Kalstein, Ariel; et al.; Evolution of the gate current in 32 nm MOSFETs under irradiation; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 119; 2-2016; 19-24
dc.identifier.issn
0038-1101
dc.identifier.uri
http://hdl.handle.net/11336/43738
dc.description.abstract
Radiation induced currents on single 32 nm MOSFET transistors have been studied using consecutive runs of 16 O at 25 MeV. The main feature is the generation of current peaks ? in the gate and channel currents ? due to the collection of the electro?hole pairs generated by the incident radiation runs. It has been observed that the incident ions cause damage in the dielectric layer and in the substrate affecting the collection of carriers, and hence the radiation-induced current peaks. It has been find out a decrease of the current peak due to the increase of the series resistance by non-ionizing energy loss in the semiconductor substrate, and an increase of the leakage current due to defects in the gate oxide by ionizing energy loss. For low levels of damage in the gate oxide, the main feature is the shift of the VTH. Hot carriers heated by the incident radiation in the depletion region and injected in the gate oxide cause the change of the VTH due to electron or hole trapping for n- or p-channel respectively. The overall results illustrate that these effects must be taken into consideration for an accurate reliability projection.
dc.format
application/pdf
dc.language.iso
eng
dc.publisher
Pergamon-Elsevier Science Ltd
dc.rights
info:eu-repo/semantics/openAccess
dc.rights.uri
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subject
Radiation Effects on Mosfet
dc.subject
Radiation-Induced-Leakage-Current
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Single-Event Gate Rupture
dc.subject.classification
Ingeniería de Sistemas y Comunicaciones
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Ingeniería Eléctrica, Ingeniería Electrónica e Ingeniería de la Información
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INGENIERÍAS Y TECNOLOGÍAS
dc.title
Evolution of the gate current in 32 nm MOSFETs under irradiation
dc.type
info:eu-repo/semantics/article
dc.type
info:ar-repo/semantics/artículo
dc.type
info:eu-repo/semantics/publishedVersion
dc.date.updated
2018-04-27T14:00:37Z
dc.journal.volume
119
dc.journal.pagination
19-24
dc.journal.pais
Estados Unidos
dc.journal.ciudad
Amsterdam
dc.description.fil
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Debray, Mario Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Vega, Nahuel Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Quinteros, Cynthia Paula. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Kalstein, Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
dc.description.fil
Fil: Guarin, F.. Hopewell Junction; Estados Unidos
dc.journal.title
Solid-state Electronics
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.sse.2016.02.004
dc.relation.alternativeid
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S003811011600023X
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