Artículo

Diffusion of Sn in different purity α-Ti

Perez, Rodolfo ArielIcon ; Dyment, FannyIcon ; Behar, Andrea Marcela
Fecha de publicación: 05/2003
Editorial: Elsevier Science
Revista: Materials Letters
ISSN: 0167-577X
Idioma: Inglés
Tipo de recurso: Artículo publicado
Clasificación temática:

Resumen

The diffusion of Sn in the hcp (α) phase of high purity (99.99%) and pure (99.9%) Ti was studied at different temperatures from 873 up to 1100 K. The Rutherford Backscattering Spectrometry (RBS) technique was used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows the prediction of the Arrhenius law. No significant difference between both kinds of Ti samples was observed. Normal diffusion parameters, Q and D0, close to the self-diffusion ones were obtained.
Palabras clave: Diffusion , Enhanced Diffusion , Hcp Metals , Rbs , Sn , Ti , Ultra-Fast Diffusion
 
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info:eu-repo/semantics/openAccess Excepto donde se diga explícitamente, este item se publica bajo la siguiente descripción: Creative Commons Attribution-NonCommercial-ShareAlike 2.5 Unported (CC BY-NC-SA 2.5)
Identificadores
URI: http://hdl.handle.net/11336/42734
DOI: http://dx.doi.org/10.1016/S0167-577X(02)01353-8
URL: https://www.sciencedirect.com/science/article/pii/S0167577X02013538
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Citación
Perez, Rodolfo Ariel; Dyment, Fanny; Behar, Andrea Marcela; Diffusion of Sn in different purity α-Ti; Elsevier Science; Materials Letters; 57; 18; 5-2003; 2670-2674
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